TGA4508 查看數據表（PDF） - TriQuint Semiconductor

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产品描述 (功能)

比赛名单

TGA4508

Ka Band Low Noise Amplifier

TriQuint Semiconductor 

TGA4508

TABLE IV

THERMAL INFORMATION

PARAMETER

θJC Thermal Resistance

(channel to backside of

carrier)

TEST

CONDITIONS

Vd = 3 V

ID = 40 mA

Pdiss = 0.12 W

TCH

θJC

Tm

(oC) (°C/W) (HRS)

85

125

3E+7

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo

Carrier at 70°C baseplate temperature. Worst case condition with no RF applied,

100% of DC power is dissipated.

Median Lifetime (Tm) vs. Channel Temperature

4

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