TGA4541-SM 查看數據表（PDF） - TriQuint Semiconductor

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TGA4541-SM

Ka-Band Variable Gain Driver Amplifier

TriQuint Semiconductor 

TGA4541-SM

Ka-Band Variable Gain Driver Amplifier

Specifications

Absolute Maximum Ratings

Recommended Operating Conditions

Parameter

Drain Voltage,Vd

Drain Current, Id1

Drain Current, Id2+Id3

Power Dissipation, Pdiss

RF Input Power, CW, 50Ω,T =

25ºC

Channel Temperature, Tch

Mounting Temperature (30

Seconds)

Storage Temperature

Rating

+6 V

96 mA

672 mA

4.0 W

+20 dBm

200 oC

260 oC

Parameter

Vd

Id1

Id2+Id3

Vg

Min Typical Max Units

5

V

60

mA

270

mA

-0.7

V

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

-40 to 150 oC

Operation of this device outside the parameter ranges

given above may cause permanent damage. These

are stress ratings only, and functional operation of the

device at these conditions is not implied.

Electrical Specifications

Test conditions unless otherwise noted: 25ºC, Vd = 5 V, Id1 = 60 mA, Id2+Id3 = 270 mA, Vc = -1.0 V, Vg = -0.7 V typical.

Id2+Id3 are held constant throughout the test. Z0: 50 Ώ

Parameter

Min

Typical

Max Units

Operational Frequency Range

28

31

GHz

Gain:

28 to < 29 GHz

31.5

42

dB

29 to < 30 GHz

31.5

40

dB

30 to 31 GHz

26.5

39

dB

Attenuation Range

30

dB

Input Return Loss

18

dB

Output Return Loss

17

dB

Output Power @ 1dB Gain Compression

(max gain):

28 to < 29 GHz

21

dBm

29 to < 30 GHz

20.5

dBm

30 to 31 GHz

15

dBm

Output TOI

31

dBm

Gain Temperature Coefficient (max gain)

-0.08

dB/°C

Power Temperature Coefficient (max gain)

-0.008

dB/°C

Datasheet: Rev A 08-30-13

© 2013 TriQuint

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Disclaimer: Subject to change without notice

www.triquint.com

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