TLP523-4 查看數據表（PDF） - Toshiba

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TLP523-4

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

Toshiba 

TLP523,TLP523−2,TLP523−4

Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Reverse current

Capacitance

Collector−emitter

breakdown voltage

Collector dark current

Capacitance collector

to emitter

Current transfer ratio

Collector−emitter

saturation voltage

Capacitance input

to output

Isolation resistance

Symbol

Test Condition

VF

IF = 10 mA

IR

VR = 5 V

CT

V = 0, f = 1 MHz

V(BR) CEO IC = 1 mA

ICEO

CCE

IC / IF

VCE = 24 V

VCE = 24 V, Ta = 85°C

V = 0, f = 1 MHz

IF = 1 mA, VCE = 1 V

VCE(sat) IC = 50 mA, IF = 10 mA

CS

VS = 0, f = 1 MHz

RS

VS = 500 V, R.H.≤ 60%

Min. Typ. Max. Unit

1.0 1.15 1.3

V

—

—

10

μA

—

30

—

pF

55

—

—

V

—

10 200 nA

—

0.5

10

μA

—

10

—

pF

500 2000 —

%

—

—

1

V

—

0.8

—

pF

5×1010 1014

—

Ω

Switching Characteristics (Ta = 25°C)

Characteristic

Turn−on time

Turn−off time

Symbol

tON

tOFF

Test Condition

VCC = 10 V, RL = 180 Ω

IF = 16 mA

Min. Typ. Max. Unit

—

3

—

μs

—

80

—

μs

Switching Time Test Circuit

IF

IF

RL

VCC

VCE

IF

VCE

tOFF

9V

1V

tON

3

2007-10-01

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