BD678A(2003) 查看數據表（PDF） - STMicroelectronics
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BD678A Datasheet PDF : 6 Pages
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BD677/677A/678/678A/679/679A/680/680A/681/682
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.12
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCE = rated VCBO
VCE = rated VCBO
TC = 100 oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE = half rated VCEO
VEB = 5 V
IC = 50 mA
for BD677/677A/678/678A
for BD679/679A/680/680A
for BD681/682
VCE(sat)∗ Collector-Emitter
Saturation Voltage
for BD677/678/679/680/681/682
IC = 1.5 A IB = 30 mA
for BD677A/678A/679A/680A
IC = 2 A
IB = 40 mA
VBE∗
Base-Emitter Voltage
for BD677/678/679/680/681/682
IC = 1.5 A VCE = 3 V
for BD677A/678A/679A/680A
IC = 2 A
VCE = 3 V
hFE∗ DC Current Gain
for BD677/678/679/680/681/682
IC = 1.5 A VCE = 3 V
for BD677A/678A/679A/680A
IC = 2 A
VCE = 3 V
hfe
Small Signal Current IC = 1.5 A VCE = 3 V f = 1MHz
Gain
* Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Min.
60
80
100
750
750
1
Typ.
Max.
0.2
2
0.5
2
2.5
2.8
2.5
2.5
Unit
mA
mA
mA
mA
V
V
V
V
V
V
V
Safe Operating Areas
Derating Curve
2/6
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