UPD16818GS 查看數據表（PDF） - NEC => Renesas Technology

零件编号

产品描述 (功能)

比赛名单

UPD16818GS

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

NEC => Renesas Technology 

µPD16818

BLOCK DIAGRAM

0.01 µF

0.01 µF

0.01 µF

VDD C1L

C1H C2L

C2H VG

OSC

CIRCUIT

CHARGE

PUMP

RX BAND GAP

REFERENCE

LEVEL CONTROL

CIRCUIT

Note PS

IN1

IN2

INC

DGND

SWITCH

CIRCUIT

CONTROL

CIRCUIT

LEVEL

SHIFT

“H”

BRIDGE 1

“H”

BRIDGE 2

VM

VM1

1A

1B

PGND

VM2

2A

2B

PGND

Note The power-saving mode is set when the PS pin goes high. In this mode, the voltage of the charge pump circuit

is lowered and the ON resistance of the H bridge driver transistor increases, limiting the current.

Remark

is connected in diffusion layer.

5

Share Link: