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UT62L25616MC-70LI 查看數據表(PDF) - Utron Technology Inc

零件编号
产品描述 (功能)
比赛名单
UT62L25616MC-70LI
Utron
Utron Technology Inc Utron
UT62L25616MC-70LI Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Rev. 1.5
UTRON
UT62L25616(I)
256K X 16 BIT LOW POWER CMOS SRAM
CAPACITANCE (TA=25, f=1.0MHz)
PARAMETER
SYMBOL
MIN.
Input Capacitance
CIN
-
Input/Output Capacitance
CI/O
-
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
MAX
6
8
UNIT
pF
pF
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0V to 3.0V
5ns
1.5V
CL = 30pF, IOH/IOL = -1mA / 2.1mA
AC ELECTRICAL CHARACTERISTICS (VCC =2.7V~3.6V, TA = -40to 85(I))
(1) READ CYCLE
PARAMETER
SYMBOL UT62L25616(I)-55 UT62L25616(I)-70 UT62L25616(I)-100 UNIT
MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time
tRC
55
-
70
-
100
-
ns
Address Access Time
tAA
-
55
-
70
-
100 ns
Chip Enable Access Time
tACE
-
55
-
70
-
100 ns
Output Enable Access Time
tOE
-
30
-
35
-
50
ns
Chip Enable to Output in Low Z
tCLZ*
10
-
10
-
10
-
ns
Output Enable to Output in Low Z tOLZ*
5
-
5
-
5
-
ns
Chip Disable to Output in High Z
tCHZ*
-
20
-
25
-
30
ns
Output Disable to Output in High Z tOHZ*
-
20
-
25
-
30
ns
Output Hold from Address Change tOH
10
-
10
-
10
-
ns
LB , UB Access Time
tBA
-
55
-
70
-
100 ns
LB , UB to High-Z Output
tBHZ
-
25
-
30
-
40
ns
LB , UB to Low-Z Output
tBLZ
10
-
10
-
10
-
ns
(2) WRITE CYCLE
PARAMETER
SYMBOL
UT62L25616(I)-55
MIN. MAX.
UT62L25616(I)-70
MIN. MAX.
UT62L25616(I)-100
MIN. MAX.
UNIT
Write Cycle Time
tWC
55
-
70
-
100
-
ns
Address Valid to End of Write
tAW
50
-
60
-
80
-
ns
Chip Enable to End of Write
tCW
50
-
60
-
80
-
ns
Address Set-up Time
tAS
0
-
0
-
0
-
ns
Write Pulse Width
tWP
45
-
55
-
70
-
ns
Write Recovery Time
tWR
0
-
0
-
0
-
ns
Data to Write Time Overlap
tDW
25
-
30
-
40
-
ns
Data Hold from End of Write Time tDH
0
-
0
-
0
-
ns
Output Active from End of Write
tOW*
5
-
5
-
5
-
ns
Write to Output in High Z
tWHZ*
-
30
-
30
-
40
ns
LB , UB Valid to End of Write
tBW
45
-
60
-
80
-
ns
*These parameters are guaranteed by device characterization, but not production tested.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
5
P80054

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