V53C808H40 查看數據表（PDF） - Mosel Vitelic Corporation

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V53C808H40

HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Mosel Vitelic Corporation  

MOSEL VITELIC

V53C808H

DC and Operating Characteristics

TA = 0°C to 70°C, VCC = 5 V ± 10%, VSS = 0 V, unless otherwise specified.

Symbol Parameter

Access

Time

V53C808H

Min. Typ. Max.

Unit Test Conditions

Notes

ILI

Input Leakage Current

–10

(any input pin)

ILO

Output Leakage Current

–10

(for High-Z State)

ICC1

VCC Supply Current,

35

Operating

40

10

mA VSS £ VIN £ VCC

10

mA VSS £ VOUT £ VCC

RAS, CAS at VIH

160

mA tRC = tRC (min.)

1, 2

150

45

145

50

ICC2

VCC Supply Current,

TTL Standby

ICC3

VCC Supply Current,

35

RAS-Only Refresh

40

135

2

mA RAS, CAS at VIH

other inputs ³ VSS

160

mA tRC = tRC (min.)

2

150

45

145

50

ICC4

VCC Supply Current,

35

EDO Page Mode

Operation

40

45

50

135

95

mA Minimum cycle

1, 2

90

85

80

ICC5

VCC Supply Current,

Standby, Output Enabled

ICC6

VCC Supply Current,

CMOS Standby

ICC7

Self Refresh Current

VCC

Supply Voltage

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

VOH

Output High Voltage

2.0

mA RAS = VIH, CAS = VIL

1

other inputs ³ VSS

2.0

mA RAS ³ VCC – 0.2 V,

CAS ³ VCC– 0.2 V,

All other inputs ³ VSS

400

mA CBR Cycle with tRAS ³ tRASS

(Min.) and CAS = VIL;

WE = VCC–0.2V; A0–A8 and

DIN = VCC–0.2V

4.5

5.0

5.5

V

–1

0.8

V

3

2.4

VCC + 1 V

3

0.4

V

IOL = 2 mA

2.4

V

IOH = –2 mA

V53C808H Rev. 1.5 April 1998

4

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