DFD30T 查看數據表（PDF） - SANYO -> Panasonic
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DFD30T Datasheet PDF : 2 Pages
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Ordering number:EN2405
DFD30T
Diffused Junction Type Silicon Diode
3.0A Power Rectifier
Features
· High-speed switching use.
· Reverse recovery time trr=0.15µs max (B, C, E, G).
trr=0.3µs max (J, L).
· Peak reverse voltage:VRM=100 to 1000V
· Average Rectified current IO=3.0A
Package Dimensions
unit:mm
1177
[DFD30T]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
C:Cathode
A:Anode
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
DFD30TB DFD30TC DFD30TE DFD30TG Unit
VRM
IO
IFSM
Tj
Tstg
Ta=25˚C
50Hz sine wave, 1 cycle
100
200
400
600 V
→
→
→
3.0 A
→
→
→
140 A
→
→
→
150 ˚C
→
→
→ –40 to +150 ˚C
Parameter
Symbol
Conditions
Peak Reverse Voltage
Averasge Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRM
IO
IFSM
Tj
Tstg
Ta=25˚C
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C
DFD30TJ DFD30TL
800
1000
→
3.0
→
80
→
125
→ –40 to +150
Parameter
Forward Voltage
Reverse Current
Reverse Recovery Time
Symbol
VF
IR
trr
Reverse Recovery Time Test Circuit
Conditions
IF=3.0A (B, C, E, G)
IF=3.0A (J, L)
VR:At each VRM
IF=2mA, VR=15V (B,C, E, G)
IF=2mA, VR=15V (J, L)
Unit
V
A
A
˚C
˚C
Ratings
Unit
min typ max
1.2 V
1.5 V
20 µA
0.15 µs
0.3 µs
Unit (resistance:Ω, capacitance:F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT) 5138TA, TS No.2405-1/2
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