D822 查看數據表（PDF） - Unspecified

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产品描述 (功能)

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D822

Silicon NPN Power Transistor

Unspecified 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD822

DESCRIPTION

·High Breakdown Voltage-

: VCBO= 1500V (Min)

·High Switching Speed

·Low Collector Saturation Voltage-

: VCE(sat)= 5.0V(Max.)@ IC= 6A

APPLICATIONS

·Designed for color TV horizontal output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

600

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current- Continuous

7

A

IE

Emitter Current- Continuous

PC

Collector Power Dissipation

@ TC≤90℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-7

A

50

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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