HEC4085B 查看數據表（PDF） - Philips Electronics
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HEC4085B Datasheet PDF : 3 Pages
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Philips Semiconductors
Dual 2-wide 2-input AND-OR-invert gate
Product specification
HEF4085B
gates
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
SYMBOL TYP. MAX.
Propagation delays
An, Bn → On
HIGH to LOW
LOW to HIGH
Output transition times
HIGH to LOW
LOW to HIGH
5
10
tPHL
15
5
10
tPLH
15
5
10
tTHL
15
5
10
tTLH
15
75
155 ns
30
60 ns
20
40 ns
65
135 ns
30
55 ns
20
40 ns
60
120 ns
30
60 ns
20
40 ns
60
120 ns
30
60 ns
20
40 ns
TYPICAL EXTRAPOLATION
FORMULA
48 ns + (0,55 ns/pF) CL
19 ns + (0,23 ns/pF) CL
12 ns + (0,16 ns/pF) CL
38 ns + (0,55 ns/pF) CL
19 ns + (0,23 ns/pF) CL
12 ns + (0,16 ns/pF) CL
10 ns + (1,0 ns/pF) CL
9 ns + (0,42 ns/pF) CL
6 ns + (0,28 ns/pF) CL
10 ns + (1,0 ns/pF) CL
9 ns + (0,42 ns/pF) CL
6 ns + (0,28 ns/pF) CL
Dynamic power
dissipation per
package (P)
VDD
V
TYPICAL FORMULA FOR P (µW)
5
750 fi + ∑ (foCL) × VDD2
10
3200 fi + ∑ (foCL) × VDD2
15
9200 fi + ∑ (foCL) × VDD2
where
fi = input freq. (MHz)
fo = output freq. (MHz)
CL = load capacitance (pF)
∑ (foCL) = sum of outputs
VDD = supply voltage (V)
January 1995
3
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