IPD122N10N3G(2009) 查看數據表（PDF） - Infineon Technologies
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IPD122N10N3G Datasheet PDF : 9 Pages
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IPD122N10N3 G
1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS≥10 V
100
60
50
80
40
60
30
40
20
20
10
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
1 µs
10 µs
102
100 µs
1 ms
101
10 ms
DC
100 0.5
0.2
0.1
0.05
10-1 0.02
0.01
single pulse
100
10-1
Rev. 2.2
100
101
102
V DS [V]
10-2
103
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-07-09
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