74V2G66STR(2000) 查看數據表（PDF） - STMicroelectronics
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74V2G66STR Datasheet PDF : 8 Pages
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74V2G66
s HIGH SPEED:
tPD = 0.3 ns (TYP.) at VCC = 5V
tPD = 0.4 ns (TYP.) at VCC = 3.3V
s LOW POWER DISSIPATION:
ICC = 1 µA (MAX.) at TA = 25 oC
s LOW ”ON” RESISTANCE:
RON = 10Ω (TYP.) AT VCC = 5.0V II/O=100µA
RON = 12Ω (TYP.) AT VCC = 3.3V II/O=100µA
s SINE WAVE DISTORTION
0.04% (TYP.) AT VCC=3.3V f=1KHz
s WIDE OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 5V
DESCRIPTION
The 74V2G66 is an high-speed CMOS DUAL
BILATERAL SWITCH fabricated in silicon gate
C2MOS technology. It achieves high speed
propagation delay and VERY LOW ON
resistances while maintaining true CMOS low
power consumption. This feature makes this part
ideal for battery-powered equipment. This
bilateral switch handles rail to rail analog and
digital signals that may vary across the full
DUAL BILATERAL SWITCH
PRELIMINARY DATA
SOT23-8L
PACKAGE
SOT23-8L
ORDER CODES
T UB E
T&R
74V2G66STR
power-supply range (from Vcc to Ground).
The C input is provided to control the switch and
it’s compatible with standard CMOS output; the
switch is ON when the C input is held high and off
when C is held low. It can be used in many
application as Battery Powered System, Audio
Signal Routing, Communications System, Test
Equipment. It’s available in the commercial
temperature range in SOT23-8L.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2000
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