BAW56TT1G(2010) 查看數據表（PDF） - ON Semiconductor

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BAW56TT1G
(Rev.:2010)

Dual Switching Diode

ON Semiconductor 

BAW56TT1G

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 mAdc)

Reverse Voltage Leakage Current

(VR = 25 Vdc, TJ = 150C)

(VR = 70 Vdc)

(VR = 70 Vdc, TJ = 150C)

Diode Capacitance

(VR = 0, f = 1.0 MHz)

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 60 mAdc)

(IF = 150 mAdc)

Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 100 Ω, IR(REC) = 1.0 mAdc) (Figure 1)

Symbol

V(BR)

IR

CD

VF

trr

Min

Max

Unit

70

--

Vdc

mAdc

--

30

--

2.5

--

50

--

2.0

pF

mVdc

--

715

--

855

--

1000

--

1250

--

6.0

ns

820 Ω

+10 V

2.0 k

100 mH IF

0.1 mF

DUT

50 Ω OUTPUT

PULSE

GENERATOR

0.1 mF

tr

tp

t

10%

50 Ω INPUT

SAMPLING

VR

OSCILLOSCOPE

90%

INPUT SIGNAL

IF

trr

t

iR(REC) = 1.0 mA

IR

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

http://onsemi.com

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