IRG4BC20UPBF(2004) 查看數據表（PDF） - International Rectifier

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IRG4BC20UPBF
(Rev.:2004)

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

International Rectifier 

IRG4BC20UPbF

25

20

15

Square wave:

60% of rated

voltage

10

I

5

Ideal diodes

For both:

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

Gate drive as specified

Power Dissipation = 13W

Triangular wave:

I

Clamp voltage:

80% of rated

0

A

0.1

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

100

TJ = 25°C

TJ = 150°C

10

1

0.1

0.1

VGE = 15V

20µs PULSE WIDTH

1

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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A

100

TJ = 150°C

10

TJ = 25°C

1

V CC = 10V

0.1

5µs PULSE WIDTH A

4

6

8

10

12

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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