IRG4BC20SPBF(2004) 查看數據表（PDF） - International Rectifier

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IRG4BC20SPBF
(Rev.:2004)

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

International Rectifier 

1000

800

600

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

Cies

400

200

0

1

Coes

Cres

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

IRG4BC20SPbF

20 VCC = 400V

I C = 10A

16

12

8

4

0

0

5

10

15

20

25

30

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

2.20

VCC = 480V

VGE = 15V

TJ = 25 ° C

2.16 IC = 10A

2.12

2.08

2.04

2.00

0

10

20

30

40

50

RG , Gate Resistance (O( Ωhm))

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

10 RG = 50OΩhm

VGE = 15V

VCC = 480V

1

IC = 20A

IC = 10A

IC = 5.50AA

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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