1N4150TR 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
比赛名单
1N4150TR Datasheet PDF : 3 Pages
| |||
www.vishay.com
1N4150
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
VR = 50 V
VR = 50 V, Tj = 150 °C
VR = 0 V, f = 1 MHz,
VHF = 50 mV
IF = IR = (10 to 100) mA,
iR = 0.1 x IR, RL = 100 Ω
VF
0.540
VF
0.660
VF
0.760
VF
0.820
VF
0.870
IR
IR
CD
trr
MAX.
0.620
0.740
0.860
0.920
1
100
100
2.5
4
UNIT
V
V
V
V
V
nA
μA
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
1000
Scattering Limit
10
100
1
10
Scattering Limit
0.1
0.01
0
94 9100
VR = 50 V
40
80 120 160 200
TJ - Junction Temperature (°C)
Fig. 1 - Reverse Current vs. Junction Temperature
1
0.1
0
94 9162
TJ = 25 °C
0.4
0.8
1.2
1.6 2.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
Cathode Identification
26 min. [1.024]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 1.9, 06-Jul-17
2
Document Number: 85522
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 