IXGH12N100AU1 查看數據表（PDF） - IXYS CORPORATION

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IXGH12N100AU1

Low VCE(sat)IGBT with Diode High Speed IGBT with Diode

IXYS CORPORATION 

IXGH12N100U1

IXGH12N100AU1

Fig. 12. Forward current versus

voltage drop.

Fig. 13. Recovery charge versus -diF/dt.

Fig. 14. Peak reverse current versus

-di /dt.

F

Fig. 15. Dynamic parameters versus

junction temperature.

Fig. 16. Reverse recovery time .

versus -diF/dt

Fig. 17. Forward voltage recovery and

time versus -diF/dt.

Fig. 18. Transient thermal impedance junction to case.

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