1SS400-TG 查看數據表（PDF） - Willas Electronic Corp.

零件编号

产品描述 (功能)

比赛名单

1SS400-TG

SWITCHING Diodes

Willas Electronic Corp. 

WILLAS

66FM120-M+

THRU LESHAN RADIO COMPANY, LTD.

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

FM1200-M+

6:,7&+,1*'LRGHV

Features

SwitchSOinD-g12d3P+iaocPdkAaeCgKeAoGuSEtOliDne-523

Pb Free Product

• Applications

L1SS400GT1G

• Batch process design, excellent power dissipHaigtihosnpeoeffdesrwsitching

•

Applicbaetttieornresverse

le

akage

cur

ren

t

a

nd

the

rmal resistanc

• Features

e.

.051(1.30)

SOD-123H

Hig•hLosoppwteimepirdzoefsiblweoistacurhdrfiasnpcgeacmeo. unted

application

in

order to

1) Extremely

small

surface

.043(1.10)

mounting type.

1

•

Feat•uLroewspower loss, high efficiency.

1) E•xHtriegmh ceulyrresnmt acallpsaubrifliatyc,elomwofournwtainrdg

• High surge capability.

2) High Speed.

3) High reliability.

vtoylpt aeg. e•dCroonps.truction

0.146(3.7)

0.130(3.3)

2

0.012(0.3) Typ.

.028(0.70)

2) H•igGhuaSrpderinegd.for overvoltage protection.

Silicon epitaxial planar

SO.0D20-(702.530)

3) H•igUhltrraehliiagbhi-lsitpye. ed switching.

• We declare that the material of product

•

Con••sLStreiulaiccdot-inforeenepiptaaxritasl

planar chip, metal s

meet environmental

ilicon junccotmiopnlia. nce with

standa• rDdesviocef Marking

RoHS

requirements.

SiliconMIeLp-SitaTxDi-a1l9p5l0a0na/2r28

L1SS400GT1G=3

• RoHS product for packing code suffix "G"

.067(1.70)

.059(1.50)

1

CATHODE

0.071(1.8)

0.056(1.4)

2

ANODE

ORDRHINaGlogINenFOfrReeMpArTodIOuNct for packing code suffix "H"

MDeevciche anical Mdaarktinag

ShippingABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

.006(0.15)MIN.

0.040(1.0)

1S•SE40po0x-TyG: UL94-V0 raAted flame reta3rd0a00n/tTape&RePPeaelraakmreetveerrse voltage

Pb-•FCreaseep: aMcokldaegdepilassativc,aSilOaDb-le123H

RoH• STeprmroindaulsct:Pfolartepdatcekrimnignaclos,dseolsduefrfaixbl"eGp"er

DC reverse voltage

MILP-eSakTfDorw-7ar5d 0cu,rrent

Mean rectifying current

Symbol

Limits

Unit

0.024(0.6)

VRM

90

V

VR 0.031(0.8) Typ. 80

V

0.031(0.8) Typ.

I FM

225

mA

Dimensions in inches and (Millimeters)

IO

100

mA

Halogen free pMroedthuocdt 2fo0r26packing code suffix "HSu"rge current (1s)

I surge

500

mA

• Polarity : Indicated by cathode band

Junction temperature

Tj

125

°C

Dimensions in inches and (millimeters)

Storage temperature

Tstg

– 55 ~ +125

°C

Maximu• mMoRunatitning gPsosaitinodn :EAlneyctrical Characteristics, Single Diode @TA=25℃

• Weight : Approximated 0.011 gram

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Symbol Parameter

SymbLol imitMsin.

MAXIMUM RATINGS AND ELECTRFoIrwCarAd LvoltCagHe ARACTERVISF TICS–

Reverse current

IR

–

PeRaaktingres vate2r5s℃e vamobltieangt etemperature unless otherVwiRsMe specCiafpieadcit.ance between terminals CT 90 –

Typ.

–

–

0.72

Max.

1.2

0.1

3.0

Unit

CoUndintioints

V

I F=100mA

µA

VR=80V

pF

V VR=0.5V , f=1MHz

Single phase half wave, 60Hz, resistive of inductive load. Reverse recovery time

trr

–

–

4

ns

VR=6V , IF=10mA , RL=100 Ω

DCForrecavpearcsitievevlooaldt,adgeerate current by 20%

VR

80

V

RATINGS

PMeaarkkinfgoCrowdeard current

MMeaaxinmurmecRteicfuyrrienngt PceaukrRreevnetrse Voltage

Maximum RMS Voltage

I 225 mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U

FM ORDRIN1G2INFORMA1TI3ON

14

15

16

18

10

115 120

Device

Marking

Shipping

IVRRM

20

VORMS

L1SS400GT1G

14

30

3

21

40

10050

60

4000/Tape&Reel

28

35

42

80

100 mA 150

200 V

56

70

105

140 V

SMuarxgimeumcuDrCreBlnoctk(in1gsV)oltage

IsuVrgDeC

20

30

40 50500

60

80

100 mA 150

200 V

Maximum Average Forward Rectified Current

IO

1.0

A

Junction temperature

Peak Forward Surge Current 8.3 ms single half sine-wave

Tj

IFSM

125

℃

30

A

Sstuoprearimgpeosteed monpraeterdalotaudr(eJEDEC method)

Typical Thermal Resistance (Note 2)

Tstg

RΘJA

-55~+125

℃

40

℃

Typical Junction Capacitance (Note 1)

EleOcpetrraictinaglTRemapteinragtusre @RanTgAe=25℃

Storage TempePraaturraemRaentgeer

CJ

TJ

TSTG

Symbol

-55 to +125

Min. Typ. Max.

Unit

120

-55 to +150

- 65 to +175

Conditions

P

1/3

CHARACTERISTICS

FMoarxwimaurmdFvorowaltrad gVoeltage at 1.0A DC

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U

VF VF

0.50 1.2

V 0.70

IF=01.8050mA

0.9

0.92 V

Maximum Average Reverse Current at

RReavteedrDsCeBclouckrirneg nVot ltage

@T A=25℃

@T A=125℃

IR IR

0.1 μA

0.5

10

VR=80V

m

CNaOpTEaSc:itance between terminals

CT

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

R2e- Tvheerrmsael RreesicstoanvceeFrryomtiJmunection to Ambient

trr

3.0 pF

VR=0.5V,f=1MHZ

4

ns VR=6V,IF=10mA,RL=100Ω

2012-10

2012-06

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

Share Link: