1SS400-TH 查看數據表（PDF） - Willas Electronic Corp.

零件编号

产品描述 (功能)

比赛名单

1SS400-TH

SWITCHING Diodes

Willas Electronic Corp. 

WILLAS

66FMT1H2R0U-M+

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

ELECTRICAL CHARASCOTEDR-1IS23T+IC CPUARCVKEASGE

(Ta = 25°C) Package outline

F e a1 t u r e s

1m

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

0.1m

100m

optimize board space.

SOD-123H

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• Hi1g0mh surge capability.

0.146(3.7)

10µ

0.130(3.3)

• Guardring for overvoltage protection.

1µ

• Ultra high-speed switching.

1m

• Silicon epitaxial planar chip, metal silicon junction.

100n

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

• R1o0H0µS product for packing code suffix "G"

10n

Halogen free product for packing code suffix "H"

FM1200-M+

Pb Free Product

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

Mechanical data

10µ

• Epox0y : UL0.924-V00.r4ated0f.6lame0r.8etard1a.0nt 1.2

1.4

• Case : MoldeFdOpRlaWsAticR,DSVOODL-T1A2G3HE : VF (V)

•

TerminalsF:iPgl.a1teFdoterwrmainrdalsc,hsaorldaecrtaebrliesptiecrsM

IL-STD

-7

,

50

1n

0.040(1.0)

0

20

40

60

80

100.0024(0.6)120

REVERSE VOLTAGE : VR (V)

0.031(0.8) Typ.

0.031(0.8) Typ.

Fig.2 Reverse characteristics

10

Method 2026

3

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

• Moun5ting Position : Any

• Weight : Approximated 0.011 gram

2

2

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃1 ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

0.5

1

RATINGS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U

Marking Code

Maximum Rec0u.2rrent Peak Reverse Voltage

12

13

14

15

16

VRRM

20

30

40

50

60

18

10

115 120

80

100

150

200 V

Maximum RMS Voltage

VRMS

14

21

Maximum DC B0.1locking Voltage

0

2

4

6

8

10 VD12C

20

14

30

28

35

0

40 0 50

42

60 10

56

70

80 20 100

105

140 V

15300

200 V

Maximum Average ForwaRrdERVeEcRtifSieEd VCOurLreTnAtGE : VR (V) IO

FORWAR1D.0CURRENT : I F (mA)

A

Peak

Forward

SFurigge.3CuCrreanpt 8a.3cmitsasnincglee

hbalef stiwnee-weanve

terminals

IFSM

Fig.4 Reverse recovery time characteristics

30

A

superimposed on10r0ated load (JEDEC method)

Typical Thermal Resistance (Note 2)

RΘJA

40

℃

Typical Junction50Capacitance (Note 1)

Operating Temperature Range

Storage Temperature Range

20

CJ

TJ

TSTG

-55 to +125

120

0.01µ-F65 to D+1.U7.5T.

-55 to +150

CHARACTERISTICS

Maximum Forwa1r0d Voltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

Rated DC Blockin5g Voltage

@T A=125℃

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM1650-kMΩH FM180-MH FM1100-MH FM1150-MH FM1200-MH U

VF

PU0L.5S0EGENERATOR0.70

0.85 SAMPLING0.9

0.92 V

IR

OUTPUT 50Ω

50Ω

0.5

OSCILLOSCOPE

m

10

NOTES:

1- Measured at 1 M2HZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

1

0.1

1

10

100

1000

10,000

PULSE WIDTH : TW (ms)

Fig.5 Surge current characteristics

Fig.6 Reverse recovery time (trr)

measurement circuit

2012-10

2012-06

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP

Share Link: