IXFN36N100 查看數據表（PDF） - IXYS CORPORATION
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IXFN36N100 Datasheet PDF : 4 Pages
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IXFN 36N100
12
10
VDS = 500 V
ID = 18 A
8
IG = 10 mA
6
4
2
0
0 100 200 300 400 500 600
Gate Charge - nC
Figure 7. Gate Charge
100
30000
10000
1000
Ciss
Coss
f = 100kHz
Crss
100
0 5 10 15 20 25 30 35 40
VDS - Volts
Figure 8. Capacitance Curves
80
60
40
TJ = 125OC
TJ = 25OC
20
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Volts
Figure 9. Forward Voltage Drop of the Intrinsic Diode
1.000
0.100
0.010
0.001
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Figure 10. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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