2N1671 查看數據表（PDF） - Unspecified

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2N1671

PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS

Unspecified 

2N1671 – 2N1671A – 2N1671B

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

IEB2O

VEB1(sat)

RBBO

η

IV

IP

Ratings

Emitter Reverse Current

Emitter saturation Voltage

Interbase Resistance

Intrinsic stand-off ratio

Valley Current

Peak Current

Test Condition(s)

Min Typ Mx

VB2E=30 V, IB1= 0

VB2B1 = 10 V, IE= 50 mA

VB2B1 = 3 V, , IE= 0

VB2B1= 10 V

VB2B1= 10 V, RB2= 100

VB2B1= 25 V

2N1671 - - -12

2N1671A - - -12

2N1671B - - -0.2

2N1671 - - 5

2N1671A - - 5

2N1671B - - 5

2N1671 4.7 - 9.1

2N1671A 4.7 - 9.1

2N1671B 4.7 - 9.1

2N1671 0.47 - 0.62

2N1671A 0.47 - 0.62

2N1671B 0.47 - 0.62

2N1671 - - 8

2N1671A - - 8

2N1671B - - 8

2N1671 - - 25

2N1671A - - 25

2N1671B - - 6

Unit

µA

V

K

-

mA

µA

MECHANICAL DATA CASE TO-5

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

COMSET SEMICONDUCTORS

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