2N2102 查看數據表（PDF） - STMicroelectronics

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2N2102

EPITAXIAL PLANAR NPN

STMicroelectronics 

®

s GENERAL PURPOSE AMPLIFIER AND

SWITCH

DESCRIPTION

The 2N2102 is a silicon Planar Epitaxial NPN

transistor in Jedec TO-39 metal case. It is

intended for a wide variety of small-signall and

medium power applications in military and

industrial equipments.

2N2102

EPITAXIAL PLANAR NPN

TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

VCBO

VCEO

VCER

VEBO

IC

Ptot

Tstg

Tj

Parameter

Collector-Base Voltage (IE = 0)

Collector-Emitter Voltage (IB = 0)

Collector-Emitter Voltage (RBE ≤ 10Ω)

Emitter-Base Voltage (IC = 0)

Collector Current

Total Dissipation at Tamb ≤ 25 oC

at TC ≤ 25 oC

Storage Temperature

Max. Operating Junction Temperature

December 2002

Value

120

65

80

7

1

1

5

-65 to 175

175

Unit

V

V

V

V

A

W

W

oC

oC

1/4

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