2N4117 查看數據表（PDF） - RHOPOINT COMPONENTS
零件编号
产品描述 (功能)
生产厂家
2N4117 Datasheet PDF : 17 Pages
| |||
B-26
01/99
2N6453, 2N6454
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
¥ Low-Noise, High Gain
Amplifiers
¥ Low-Noise Preamplifiers
Absolute maximum ratings at TA = 25¡C
2N6453 2N6454
Reverse Gate Source Voltage
– 20 V – 25 V
Reverse Gate Drain Voltage
– 20 V – 25 V
Continuous Forward Gate Current
10 mA 10 mA
Continuous Device Power Dissipation
360 mW 360 mW
Power Derating
2.88 mW/°C 2.88 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source
Input Capacitance
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
2N6453 2N6454
Min Max Min Max Unit
V(BR)GSS – 20
– 25
V
– 0.1
nA
– 0.5 nA
IGSS
– 0.2
µA
– 1 µA
VGS(OFF) – 0.75 – 5 – 0.75 – 5 V
IDSS
15 50 15 50 mA
Process NJ132L
Test Conditions
IG = – 1 µA, VDS = ØV
VGS = – 10V, VDS = ØV
VGS = – 15V, VDS = ØV
VGS = – 10V, VDS = ØV
VGS = – 15V, VDS = ØV
VDS = 10V, ID = 0.5 nA
VDS = 10V, VGS = ØV
TA = 125°C
TA = 125°C
| Yfs |
| Yos |
Ciss
Crss
e¯N
NF
mS VDS = 10V, ID = 5 mA
20 40 20 40 mS VDS = 10V, ID = 15 mA
µS VDS = 10V, ID = 5 mA
100
100 µS VDS = 10V, ID = 15 mA
pF VDS = 10V, ID = 5 mA
25
25 pF VDS = 10V, ID = 15 mA
pF VDS = 10V, ID = 5 mA
5
5 pF VDS = 10V, ID = 15 mA
5
10 nV/√Hz VDS = 10V, ID = 5 mA
3
8 nV/√Hz VDS = 10V, ID = 5 mA
1.5
2.5 dB
VDS = 10V, ID = 5 mA
RG = 10 kΩ
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 10 kHz
f = 1 kHz
f = 10 Hz
TOÐ72 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
Share Link: 