2N6594 查看數據表（PDF） - Inchange Semiconductor
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2N6594 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6594
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0
-40
V
VCEsat-1 Collector-emitter saturation voltage IC=-4A; IB=-0.4A
-1.5
V
VCEsat-2 Collector-emitter saturation voltage IC=-12A; IB=-2.4A
-4.0
V
VBEsat Base-emitter saturation voltage
IC=-4A; IB=-0.4A
-2.0
V
ICEO
Collector cut-off current
VCE=-40V; IB=0
-1.0 mA
ICBO
Collector cut-off current
VCB=-45V; IE=0
-1.0 mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5.0 mA
hFE-1
DC current gain
IC=-4A ; VCE=-3V
15
200
hFE-2
DC current gain
IC=-12A ; VCE=-4V
5
100
fT
Transition frequency
IC=-1.0A ; VCE=-4V;f=0.5MHz 1.5
20 MHz
Switching times
td
Delay time
tr
Rise time
tstg
Storage time
tf
Fall time
IC=-2A; IB1=-IB2=-0.2A
VCC=-30V; tp=25μs;
Duty Cycle≤2.0%
0.4
μs
1.5
μs
5.0
μs
1.5
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.75
UNIT
℃/W
2
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