2N6782(2000) 查看數據表（PDF） - Semelab - > TT Electronics plc
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2N6782 Datasheet PDF : 2 Pages
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2N6782
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSSF Gate Body Leakage Forward
IGSSR Gate Body Leakage Reverse
IDSS Zero Gate Voltage Drain Current
ID(on) On State Drain Current1
Static Drain Source On-State
VDS(on) Voltage1
VGS = 0
VDS = VGS
VGS = 20V
VGS = -20V
VDS = 0.8 Max.
VDS = Max.
VDS ³ 2VDS(ON)
ID = 0.25mA
ID = 0.5A
TA = 125°C
ID = 0.5A
TA = 125°C
Ratings VGS =0
Ratings VGS =0
TC = 125°C
VGS = 10V
VGS = 10V
ID = 3.5A
100*
2*
1*
3.5
2.1*
Static Drain Source On-State
RDS(on) Resistance1
VGS = 10V
ID = 2.25A
TC = 125°C
DYNAMIC CHARACTERISTICS
gfs
Forward Transductance 1
VDS ³ 2VDS(ON) IDS = 2.25A
1.0*
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
60*
VGS = 0
VDS = 25V
40*
f = 1MHz
10*
td(on)
tr
Turn–On Delay Time
Rise Time
VDD = 34V
RG = 25W
ID = 2.25A
RL = 15W
td(off) Turn–Off Delay Time
(MOSFET switching times are essentially
tf
Fall Time
independent of operating temperature.)
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
Continuous Source Current Body
MOdified MOS POWER
,
IS
Diode
symbol showing the intergal /
ISM
Source Current1 (Body Diode)
VSD Diode Forward Voltage 1
trr
Reverse Recovery Time
THERMAL CHARACTERISTICS
P-N junction rectifier.
5
IS = -3.5A
VGS = 0
TC = 25°C
IF =IS
TJ = 150°C
di / dt = 100A/ms
-0.75*
RqJC Thermal Resistance Junction – Case
RqJPC Thermal Resistance Junction – PC Board
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
* JEDEC registered Values
Free Air Operation
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Typ. Max. Unit
V
4.0*
V
4.0*
100*
200* nA
-100*
0.25*
mA
1*
A
V
0.6*
1.08*
3.0*
200*
100*
25*
15*
25*
25*
20*
W
V
S (É)
pF
ns
-3.5* A
-8
A
-1.5* V
200
V
8.33*
°C\W
170
6/00
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