2N7002MTF 查看數據表（PDF） - Fairchild Semiconductor
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2N7002MTF Datasheet PDF : 5 Pages
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2N7002MTF
N-Channel
Small Signal MOSFET
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
BVDSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(on)
Drain-Source Breakdown Voltage 60
Gate Threshold Voltage
1.2
Gate-Source Leakage, Forward
-
Gate-Source Leakage, Reverse
-
-
Drain-to-Source Leakage Current
-
On-State Drain-Source Current
0.5
Static Drain-Source
On-State Resistance
-
②
-
-
V VGS = 0V, ID = 250µA
-
2.5
V
VDS = VGS, ID = 250µA
- 100
VGS = 20V
nA
- -100
VGS = -20V
-
1.0
µA
VGS = 40V
- 500
VGS = 40V, TC = 125℃
-
-
A
VDS = 10V, VGS = 10V
-
5.0 Ω VGS = 10V, ID = 0.5A
gfs
Forward Transconductance ② 0.08 -
-
S VDS = 15V, ID = 0.2A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
-
50
-
-
25
pF VDS = 25V, VGS = 0V,
f = 1.0MHz
-
-
5
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
-
-
20
-
-
-
VDD = 30V, ID = 0.2A
-
-
20
ns RG = 25Ω
-
-
-
②③
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISD
VSD
Characteristic
Continuous Source Current
Pulse Source Current
①
Diode Forward Voltage
②
Min. Typ. Max. Units
Test Condition
-
- 115 mA Integral reverse pn-diode
-
- 800 mA In the MOSFET
-
-
1.5
V
TA = 25 ℃, IS = 115mA
VGS = 0V
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
③ Essentially Independent of Operating Temperature
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