2SA743A 查看數據表（PDF） - Inchange Semiconductor

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2SA743A

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA743A

DESCRIPTION

·Good Linearity of hFE

·High Collector-Emitter Breakdown Voltage-

V(BR)CEO= -80V (Min)

·Complement to Type 2SC1212A

APPLICATIONS

·Designed for use in low frequency power amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

-80

V

VCEO Collector-Emitter Voltage

-80

V

VEBO Emitter-Base Voltage

-4

V

IC

Collector Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Total Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-1

A

0.75

W

8

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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