C1212 查看數據表（PDF） - Quanzhou Jinmei Electronic

零件编号

产品描述 (功能)

比赛名单

C1212

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

Product Specification

2SC1212 2SC1212A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SC1212

2SC1212A

IC=10mA ;RBE=∞

V(BR)CBO

Collector-base

breakdown voltage

2SC1212

2SC1212A

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.1A

VBE

Base-emitter voltage

IC=50mA ; VCE=4V

ICBO

Collector cut-off current

VCB=50V; IE=0

hFE-1

DC current gain

IC=50mA ; VCE=4V

hFE-2

fT

DC current gain

Transition frequency

IC=1A ; VCE=4V

IC=30mA ; VCE=4V

‹ hFE-1 Classifications

B

C

60-120

100-200

MIN TYP. MAX UNIT

50

V

80

50

V

80

4

V

1.5

V

1.0

V

5

μA

60

200

20

160

MHz

2

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