2SD1101 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SD1101

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD1101

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

iC(peak)

PC

Tj

Tstg

Ratings

Unit

25

V

20

V

5

V

0.7

A

1

A

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 25

—

voltage

Collector to emitter breakdown V(BR)CEO 20

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE*1

85

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Notes: 1. The 2SD1101 is grouped by hFE as follows.

2. Pulse test

Grade

B

C

Mark

AB

AC

hFE

85 to 170 120 to 240

Max Unit

—

V

—

V

—

V

1.0 µA

240

0.5 V

1.0 V

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 20 V, IE = 0

VCE = 1 V, IC = 0.15 A*2

IC = 0.5 A, IB = 0.05 A*2

VCE = 1 V, IC = 0.15 A*2

See characteristic curves of 2SD467.

2

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