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2SD1766P 查看數據表(PDF) - Willas Electronic Corp.

零件编号
产品描述 (功能)
比赛名单
2SD1766P
Willas
Willas Electronic Corp. Willas
2SD1766P Datasheet PDF : 3 Pages
1 2 3
WILLAS
SOT1.-08A9SUPRlFaACsEtiMcO-UENnT cSCaHpOsTTuKlYaBtAeRTRIrEaRnRsECisTItFoIErRsS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SD1766 THRU
FM1200-M+
Pb Free Product
Features
O u t l i n e D r a w i n g Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing.1c8od1e(s4u.f6fix0")H"
Mechanical data .173(4.39)
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
so.ld0e6ra1bRleEpFer
,
MIL-STD-750
Method 2026 (1.55)REF
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
Package outline
S O T- 8 9 SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
.063(1.60)
.055(1.40)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
RATINGS
.1M5a4rk(in3g.C9o1de)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.102(2.60)
SYMBOL FM120-MH FM130-MH F.M019401-M(H2F.3M105)0-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
.023(0.58)
VRRM
20
30
40
50
60
.016(0.40)
VRMS
14
21
28
35
42
18
10
115 120
80
100
150
200
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
.047(1.2)
Peak Forw.a0rd3S1u(rg0e.C8u)rrent 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range .060TYP
Storage Temperature Range (1.50)TYP
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
.197(0.52)
.013(0.32)
30
40
120
-55 to +150
- 65 to +.10715 7(0.44)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
.118TYSPYMBOL
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
.014(0.35)
FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
(3.0)TYPVF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
0.5
Rated DC Blocking Voltage
@T A=125℃
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
Dimensions in inches and (millimeters)
Rev.C
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.

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