2SK3018 查看數據表（PDF） - Guilin Strong Micro-Electronics Co., Ltd.

零件编号

产品描述 (功能)

比赛名单

2SK3018

N-Channel Enhancement-Mode MOSFETs

Guilin Strong Micro-Electronics Co., Ltd. 

桂林斯壯微電子有限責任公司

Guilin Strong Micro-Electronics Co.,Ltd.

2SK3018

■DEVICE MARKING 打標

2SK3018=KN

■ELECTRICAL CHARACTERISTICS 電特性

(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Characteristic

特性參數

Symbol Min

符號 最小值

Typ

典型值

Max

最大值

Drain-Source Breakdown Voltage

漏極-源極擊穿電壓(ID =10uA,VGS=0V)

BVDSS

35

Gate Threshold Voltage

栅極開启電壓(ID =100uA,VGS= VDS)

Drain-Source On Voltage

漏極-源極導通電壓(ID=50mA ,VGS=5V)

(ID =400mA,VGS=10V)

VGS(th)

0.8

VDS(ON)

—

Diode Forward Voltage Drop

内附二極管正向壓降(ISD=200mA ,VGS=0V)

VSD

—

Zero Gate Voltage Drain Current

零栅壓漏極電流(VGS=0V, VDS= BVDSS)

IDSS

—

(VGS=0V, VDS=0.8BVDSS, TA=125℃)

Gate Body Leakage

栅極漏電流(VGS=+20V, VDS=0V)

IGSS

—

Static Drain-Source On-State Resistance

静态漏源導通電阻(ID=50mA ,VGS=4.5V)

RDS(ON)

—

(ID=400mA ,VGS=10V)

Input Capacitance 輸入電容

(VGS=0V, VDS=25V,f=1MHz)

CISS

—

Common Source Output Capacitance

共源輸出電容(VGS=0V, VDS=25V,f=1MHz)

COSS

—

Turn-ON Time 开启時間

(VDS=30V, ID=200mA, RGEN=25Ω)

Turn-OFF Time 关断時間

(VDS=30V, ID=200mA, RGEN=25Ω)

Reverse Recovery Time 反向恢复時間

(ISD=800mA, VGS=0V)

t(on)

—

t(off)

—

trr

—

1. FR-5=1.0×0.75×0.062in.

2. Alumina=0.4×0.3×0.024in.99.5%alumina.

3. Pulse Width<300μs; Duty Cycle<2.0%.

—

—

—

2

— 0.375

3.75

—

1.5

—

1

500

— +100

—

8

7.5

—

50

—

25

—

20

—

40

400

—

Unit

單位

V

V

V

V

uA

nA

Ω

pF

pF

ns

ns

ns

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