26MB 查看數據表（PDF） - Vishay Semiconductors
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26MB Datasheet PDF : 6 Pages
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MB High Voltage Series
Vishay High Power Products Single Phase Bridge
(Power Modules), 25 A/35 A
FORWARD CONDUCTION
PARAMETER
Maximum DC output current
at case temperature
SYMBOL
IO
TEST CONDITIONS
Resistive or inductive load
Capacitive load
Maximum peak, one cycle
non-repetitive forward current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
Low level of threshold voltage
High level of threshold voltage
Low level forward slope resistance
High level forward slope resistance
I2√t
VF(TO)1
VF(TO)2
rt1
rt2
Maximum forward voltage drop
VFM
Maximum DC reverse current per diode
RMS isolation voltage base plate
IRRM
VISOL
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Initial TJ =
TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
I2t for time tx = I2√t x √tx;
0.1 ≤ tx ≤ 10 ms, VRRM = 0 V
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ maximum
(I > π x IF(AV)), TJ maximum
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ maximum
(I > π x IF(AV)), TJ maximum
TJ = 25 °C, IFM = 40 Apk
(26MB)
TJ = 25 °C, IFM = 55 Apk
(36MB)
tp = 400 µs
TJ = 25 °C, at VRRM
f = 50 Hz, t = 1 s
26MB-A
25
20
65
400
420
335
350
790
725
560
512
5.6
0.70
0.75
7.0
6.4
1.25
10
2700
36MB-A
35
28
60
475
500
400
420
1130
1030
800
730
11.3
0.74
0.79
5.5
5.2
1.3
10
2700
UNITS
A
°C
A
A2s
kA2√s
V
mΩ
V
µA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per bridge
RthJC
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Mounting torque ± 10 %
Bridge to heatsink
Approximate weight
26MB-A
36MB-A
- 55 to 150
1.7
1.35
0.2
2.0
20
UNITS
°C
K/W
Nm
g
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93564
Revision: 17-Jun-08
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