4N40W 查看數據表（PDF） - Fairchild Semiconductor
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4N40W Datasheet PDF : 8 Pages
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PHOTO SCR OPTOCOUPLERS
4N39 4N40
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Symbol
Device
Min
EMITTER
Input Forward Voltage
IF = 10 mA
VF
All
Reverse Leakage Current
VR = 3 V
IR
All
Capacitance
VF = 0 V, f = 1.0 MHz
CJ
All
DETECTOR
Peak Off-State Voltage
RGK = 10 kΩ, TA=100 °C
VDM
4N39
200
4N40
400
Peak Reverse Voltage
TA=100 °C
4N39
200
VRM
4N40
400
On-State Voltage
Off-State Current
IT = 300 mA
VT
VDM = 200 V, TA = 100 °C,
IF = 0 mA, RGK = 10 kΩ
IDM
All
4N39
4N40
Reverse Current
VR = 200 V, TA=100 °C, IF = 0 mA
IR
4N39
4N40
Holding Current
VFx = 50V, RGK = 27 kΩ
IH
All
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
Characteristics
Test Conditions
Symbol
Device
Min
*Input Current to Trigger
VAK = 50 V, RGK = 10 kΩ
VAK = 100 V, RGK = 27 kΩ
IFT
*Turn-On Time
VAK = 50 V, IF = 30 mA
RGK = 10 kΩ, RL = 200 Ω
ton
Package Capacitance
(input to output)
f = 1 MHz
Input to Output Voltage = 0
CI-O
4N39
4N40
ALL
ALL
Coupled dv/dt, input to output
(figure 13)
dV/dt
ALL
500
ISOLATION CHARACTERISTICS
Characteristic
*Input-Output Isolation Voltage
*Isolation Resistance
Isolation Capacitance
Test Conditions
( II-0 ≤ 1 µA, Vrms, t = 1 min.)
(VI-O = 500 VDC)
(VI-O = ∅, f = 1 MHz)
Symbol
VISO
RISO
CISO
Min
5300
1011
Note
* Indicates JEDEC Registered Data
** Typical values at TA = 25°C
Typ**
1.1
50
Typ**
Typ**
0.8
Max
Unit
1.5
V
10
µA
pF
V
V
1.3
V
50
µA
150
50
µA
150
1.0
mA
Max
Units
30
mA
14
50
µA
2
pF
V/µS
Max
Units
Vac(rms)
!
pf
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