AS4C256K16E0 查看數據表（PDF） - Alliance Semiconductor
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AS4C256K16E0 Datasheet PDF : 24 Pages
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Write cycle
Std
Symbol Parameter
tASC
Column address setup time
tCAH
Column address hold time
tAWR
Column address hold time to RAS
tWCS
Write command setup time
tWCH
Write command hold time
tWCR
Write command hold time to RAS
tWP
Write command pulse width
tRWL
Write command to RAS lead time
tCWL
Write command to CAS lead time
tDS
Data-in setup time
tDH
Data-in hold time
tDHR
Data-in hold time to RAS
Shaded areas contain advance information.
Read-modify-write cycle
Std
Symbol Parameter
tRWC
Read-write cycle time
tRWD
RAS to WE delay time
tCWD
CAS to WE delay time
tAWD
Column address to WE delay time
tRSH(W) CAS to RAS hold time (write)
tCAS(W) CAS pulse width (write)
Shaded areas contain advance information.
AS4C256K16E0
®
-30
Min Max
0
–
5
–
26 –
0
–
5
–
26 –
5
–
10 –
10 –
0
–
5
–
26 –
-35
Min Max
0
–
5
–
28 –
0
–
5
–
28 –
5
–
11 –
11 –
0
–
5
–
28 –
-50
Min Max Unit
0
– ns
9
– ns
30 – ns
0
– ns
9
– ns
30 – ns
9
– ns
12 – ns
12 – ns
0
– ns
9
– ns
30 – ns
Notes
11
11
12
12
-30
Min Max
100 –
50 –
26 –
32 –
10 –
15 –
-35
Min Max
105 –
54 –
28 –
35 –
10 –
15 –
-50
Min Max Unit
120 – ns
60 – ns
30 – ns
40 – ns
12 – ns
15 – ns
Notes
11
11
11
4/11/01; v.1.1
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