B80C800DM-E3/45(2006) 查看數據表（PDF） - Vishay Semiconductors
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B80C800DM-E3/45 Datasheet PDF : 4 Pages
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B40C800DM thru B380C800DM
Vishay General Semiconductor
50
1.0 Cycle
40
Tj = 125 °C
10 ms Single Sine-Wave
30
20
10
0
0
10
100
Number of Cycles at 50 Hz
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
10
Tj = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
10
Tj = 100 °C
1
0.1
Tj = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Leakage Characteristics Per Diode
100
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Characteristics Per Diode
1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00)
0.245 (6.2) 0.285 (7.24)
Document Number 88533
09-Oct-06
0.130 (3.3)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.075 (1.90)
0.055 (1.39)
0.013 (3.3)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
www.vishay.com
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