BAP50-03 查看數據表（PDF） - Philips Electronics
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BAP50-03 Datasheet PDF : 8 Pages
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Philips Semiconductors
General purpose PIN diode
GRAPHICAL DATA
103
handbook, halfpage
rD
(Ω)
102
MGS317
10
1
10 − 2
10 − 1
1 IF (mA) 10
f = 100 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of
forward current; typical values.
Product specification
BAP50-03
500
handbook, halfpage
Cd
(fF)
400
MGS323
300
200
100
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
0
handbook, halfpage
|S21| 2
( dB )
−1
−2
MGS319
(1)
(2)
(3)
−3
−4
−5
0.5
1
1.5
2
2.5
3
f (GHz)
(1) IF = 10 mA.
(2) IF = 1 mA.
(3) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb = 25 °C.
Fig.4 Insertion loss (|S21|2) of the diode as a
function of frequency; typical values.
1999 May 10
0
handbook, halfpage
|S21| 2
( dB )
−5
MGS316
− 10
− 15
− 20
− 25
0.5
1
1.5
2
2.5
3
f (GHz)
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Fig.5 Isolation (|S21|2) of the diode as a function
of frequency; typical values.
4
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