BAS29 查看數據表（PDF） - Philips Electronics

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BAS29

General purpose controlled avalanche (double) diodes

Philips Electronics 

Philips Semiconductors

General purpose controlled avalanche

(double) diodes

Product specification

BAS29; BAS31; BAS35

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

IR

reverse current

V(BR)R

Cd

trr

reverse avalanche breakdown

voltage

diode capacitance

reverse recovery time

CONDITIONS

MIN. MAX. UNIT

see Fig.3

IF = 10 mA

−

IF = 50 mA

−

IF = 100 mA

−

IF = 200 mA

−

IF = 400 mA

−

see Fig.5

VR = 90 V

−

VR = 90 V; Tj = 150 °C

−

IR = 1 mA

120

f = 1 MHz; VR = 0; see Fig.6

−

when switched from IF = 30 mA to −

IR = 30 mA; RL = 100 Ω;

measured at IR = 3 mA; see Fig.7

750

mV

840

mV

900

mV

1

V

1.25

V

100

nA

100

µA

170

V

35

pF

50

ns

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient note 1

Note

1. Device mounted on an FR4 printed-circuit board.

CONDITIONS

VALUE

360

500

UNIT

K/W

K/W

1999 May 21

4

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