BAS40 查看數據表（PDF） - General Semiconductor

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BAS40

Schottky Diodes

General Semiconductor 

BAS40 THRU BAS40-06

ELECTRICAL CHARACTERISTICS

Ratings for one diode at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Reverse Breakdown Voltage

Tested with 10 µA Pulses

V(BR)R

40

–

–

Leakage Current

Pulse Test tp < 300 µs

at VR = 30 V

Forward Voltage

Pulse Test tp < 300 µs

at IF = 1 mA

at IF = 40 mA

IR

–

20

100

VF

–

–

380

VF

–

–

1000

Capacitance

at VR = 0 V, f = 1 MHz

Ctot

–

4.0

5

Reverse Recovery Time

trr

from IF = 10 mA through IR = 10 mA to IR = 1 mA

–

–

5

Thermal Resistance Junction to Ambient Air

RthJA

–

–

4301)

1) Device on fiberglass substrate, see layout

.30 (7.5)

.12 (3)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

.04 (1) .08 (2)

.04 (1)

.08 (2)

.06 (1.5)

.20 (5.1)

Dimensions in inches (millimeters)

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

Unit

V

nA

mV

mV

pF

ns

K/W

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