BAV70 查看數據表（PDF） - Willas Electronic Corp.
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BAV70 Datasheet PDF : 3 Pages
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WILLAS
SOT-23 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
BBAAVV7909FMT1H2R0U-M+
BAW5F6M1200-M+
Pb Free Product
Features
Package outline
Typical Characteristics • Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power lossF, ohriwgharedfficCiehnarcayc.teristics
•30H0 igh current capability, low forward voltage drop.
Reverse C0.h14a6r(a3.c7)teristics
0.130(3.3)
1000
• High surge capability.
•10G0 uardring for overvoltage protection.
• Ultra high-speed switching.
300
• 3S0 ilicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
100
Ta=100℃
MIL-STD-19500 /228
10
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
30
M3echanical data
• Epoxy : UL94-V0 rated flame retardant
1
• Case : Molded plastic, SOD-123H
,
•0.T3erminals :Plated terminals, solderable per MIL-STD-750
10
0.031(0.8) Typ.
3
Ta=25℃
Method 2026
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•0.P10.o0 larity : Indic0.4ated by cath0.o8 de band 1.2
1.6
• Mounting PositFioOnRW: AARnDyVOLTAGE VF (V)
1
0
D20imensions in in4c0hes and (millim60eters)
80
REVERSE VOLTAGE VR (V)
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave,C6a0pHazc,itraenscisetivCehaorfainctdeurcistitvicesload.
1.4
300
For capacitive load, derate current by 20%
Ta=25℃
Power Derating Curve
f=1MHz
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
250
Marking Code
12
13
14
15
16
18
10
115 120
Maximum1.R3 ecurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 V
Maximum RMS Voltage
VRMS
14
21 200 28
35
42
56
70
105
140 V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 V
Maximum1.A2 verage Forward Rectified Current
IO
150
1.0
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
1.1
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
IFSM
RΘJA
CJ
TJ
100
50
-55 to +125
30
A
40
℃
120
-55 to +150
Storage T1e.0mperature Range
0
5
10
TSTG
15
20
0
- 65 to +175
0
25
50
75
100
125
150
CHARACRTEEVERRISSETIVCOSLTAGE
VR
(V)
SYMBOL
AMBIENT TEMPERATURE Ta (℃)
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH FM1200-MH
U
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 V
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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