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BAW56W

SOT-323 Plastic-Encapsulate Diodes

Willas Electronic Corp. 

WILLAS

SOT-323 Plastic-Encapsulate Diodes

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

SOD-123+ PACKAGE

FM120-M+

BAW56TWHRU

FM1200-M+

Pb Free Product

SWITFCeHaItNuGreDsIODE

FEA•TBUaRtcEhSprocess design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

z• LowFaprsotfiSlewsiutcrfhacinegmSoupneteeddapplication in order to

z optFimoirzeGbeonaerdraslpaPcuer.pose Switching Applications

• Low power loss, high efficiency.

z• HigHhicguhrrCenot ncadpuacbtialintyc, elow forward voltage drop.

z• HigPhbs-uFrrgeeecappaacbkilaitgy.e is available

Package outline

SOT-323

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

• GuRarodHriSngpfroor douvectrvfoolrtapgaecpkrinotgecctoiodne. suffix ”G”

•

•

UltHraahloigghe-nspfereeed spwroitdchuicntgf.or packing code suffix

Silicon epitaxial planar chip, metal silicon junction.

“H”

z• LeaMdo-firseteurpearStsenmseietitveitnyviLroenvmele1ntal standards of

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

0.071(1.8)

0.056(1.4)

1

3

2

MARKHaINlogGe:n KfreJeCproduct for packing code suffix "H"

MaxMimeucmhaRnatiicngasl d@aTtaa=25℃

• Epoxy : UL94-V0 rated flame retardant

0.040(1.0)

0.024(0.6)

• Case : MoldePdapralamsteicte, rSOD-123H

Symbol

,

y Non-•RTeepremtiintiavles :PPelaatkedRteevrmerisnealsV,oslotaldgeerable per MIVLR-SMTD-750

Method 2026

Peak Repetitive Peak Reverse Voltage

r • Polarity : Indicated by cathode band

VRRM

Work•inMgouPnetainkg

Reverse Voltage

Position : Any

VRWM

a DC B•loWcekiignhgt : VAoplptraogxeimated 0.011 gram

VR

L0.0i3m1(0it.8) Typ.

100

Unit0.031(0.8) Typ.

V

Dimensions in inches and (millimeters)

75

V

in RMS

Reverse Voltage

MAXIMUM

RATINGS

AND

ELECVTRR(RIMCS)AL

53

CHARACTERISTICS

V

Forward Continuous Current

Ratings at 25℃ ambient temperature

unless

otherwise

speIcFifMied.

300

mA

SiAngvleerpahgaeseRheaclftiwfiaevde,O60uHtpzu, rteCsiustrivreenotf inductive load. IO

150

mA

FoPrecakpaFcoitirvwe aloradd,Sduerrgatee Ccuurrrerentnbty@20t=%1.0μs

lim RATINGS

@t =1.0s

2.0

IFSM

A

SYMBOL FM120-MH FM130-MH FM140-1M.H0 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

MaPrkoinwg eCrodDeissipation

Pd 12

13

14 200 15

16

18

1m0 W

115

120

MaTxhimeurmmRaelcRureresnist PtaenakceReJvuenrscetVioonltatgoe Ambient VRRM RθJA 20

30

40625 50

60

e Maximum RMS Voltage

VRMS

14

21

28

35

42

MaJxuimnucmtioDnC TBelomckpinegrVaotlutargee

VDC Tj 20

30

40 150 50

60

80

100

150

200 Volts

56

7℃0/W 105

140 Volts

80

100℃

150

200 Volts

Pr MSaxtiomruamgeAvTeeramgepFeorrawtaurrdeRectified Current

IO TSTG

-55~+150

1.0

℃

Amps

PEealkeFcotrwriacrdaSluRrgeaCtiunrrgenst 8@.3 mTsas=in2g5le℃half sine-wave IFSM

30

Amps

superimposed on rated load (JEDEC method)

Typical Thermal ResPisatarnacme e(Nteotre 2)

SRyΘmJAbol Min Typ

Max Unit 40

Conditions

℃/W

TypRiceavl eJursncetiobnreCaakpadcoitawnncev(oNlotateg1e)

Operating Temperature Range

VCTJJ(BR)

75-55 to +125

V 120

-55IRt=o2+.155μ0A

PF

℃

Storage Temperature Range

TSVTFG1

0.715

V - 65 to +175

IF=1mA

℃

Forward voltaCgHeARACTERISTICS

Maximum Forward Voltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

Rated DC Blocking Voltage

Reverse current

NOTES:

@T A=125℃

VF2

0.855 V

IF=10mA

SYVMVFBF3OL

FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH

0.50

1.0

0.7V0

0.8I5F=50mA

FM1150-MH FM1200-MH

0.9

0.92

UNIT

Volts

VIRF4

1.25

V 0.5

IF=150mA

mAmps

IR1

2.5

μA 10

VR=75V

IR2

25

nA

VR=20V

1- MCeaaspuarecditaatn1cMeHbZ eatnwd aepepnlietderremveirnseavlsoltage of 4.0 VDC. CT

2- Thermal Resistance From Junction to Ambient

Reverse recovery time

trr

2

pF

4

ns

VR=0V,f=1MHz

IF=IR=10mA

Irr=0.1XIR,RL=100Ω

2012-06

2012-1

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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