BB504M 查看數據表（PDF） - Renesas Electronics

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BB504M

Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Renesas Electronics 

BB504M

Built in Biasing Circuit MOS FET IC

VHF&UHF RF Amplifier

REJ03G0837-0700

(Previous ADE-208-982E)

Rev.7.00

Aug.10.2005

Features

• Built in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz

• High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz

• Withstanding to ESD;

Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

• Provide mini mold packages; MPAK-4 (SOT-143Rmod)

Outline

Notes:

RENESAS Package code: PLSP0004ZA-A

(Package name: MPAK-4)

2

3

1

4

1. Marking is “DS–”.

2. BB504M is individual type number of RENESAS BBFET.

1. Source

2. Gate1

3. Gate2

4. Drain

Rev.7.00 Aug 10, 2005 page 1 of 9

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