BCX53-16 查看數據表（PDF） - Willas Electronic Corp.
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BCX53-16 Datasheet PDF : 3 Pages
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WILLAS
S1O.0ATS-8UR9FAPClEaMsOtUicN-TESCnHcOaTTpKsYuBlAaRtReIERTRraECnTsIFiIEsRtSo-r2s0V- 200V
SOD-123+ PACKAGE
FM120-M+
BCX51 THRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
ELECT•RLIoCwApLroCfilHe sAuRrfaAcCe TmEouRnItSedTaICppSlic(aTtiao=n2i5n ℃orduerntloess otherwise specified)
optimize board space.
SOD-123H
• LowPaproawmereltoesrs, high efficiency.
Symbol
T est conditions
• High current capability, low forward voltage drop.
• High surge capability.
BCX51
Collect•oGr-ubaarsderinbgrefoarkodvoewrvnolvtaoglteagpreotection. V(BR)CBO IC=-100µA,IE=0
• Ultra high-speed switching.
BCX53
• Silicon epitaxial planar chip, metal silicon junction.
Min Typ 0.146(3.7)
0.130(3.3)
-45
-100
Max Unit
0.012(0.3) Typ.
V
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
BCX51
-45
CollectoMr-IeLm-SitTtDer-1b9r5e0a0kd/2o2w8n voltage
V(BR)CEO* IC=-10mA,IB=0
V
• RoHS product for packing code suffix "G"
BCX53
-80
Halogen free product for packing code suffix "H"
EmitterM-beascehbarenakicdoawlndvaotltaage
V(BR)EBO IE=-100µA,IC=0
-5
V
0.040(1.0)
Collect•oErpcouxty-o: fUf Lc9u4r-rVen0 trated flame retardant ICBO
VCB=-30V,IE=0
-0.1 µA 0.024(0.6)
Emitter• cCuats-eof:fMcoulrdreednpt lastic, SOD-123H
IEBO
VEB=-5V, ,IC=0
0.031(0.8) Typ.
-0.1 µA 0.031(0.8) Typ.
• Terminals :Plated terminals, solderablehpFeEr(1M)* IL-STVDC-E7=5-02V, IC=-5mA
63
Method 2026
y DC current gain
• Polarity : Indicated by cathode band
hFE(2)*
VCE=-2V, IC=-150mA
63
250
Dimensions in inches and (millimeters)
r • Mounting Position : Any
hFE(3)*
VCE=-2V, IC=-0.5A
40
a Collect•oWr-eeimghittt:eAr pspartouxriamtiaotendv0o.l0ta11gegram VCE(sat)* IC=-0.5A,IB=-50mA
-0.5
V
Base -emitter voltage
VBE*
VCE=-2V, IC=-0.5A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
in Transition frequency
fT
VCE=-5V,IC=-10mA, f=100MHz
Ratings at 25℃ ambient temperature unless otherwise specified.
* Pulse Test
Single phase half wave, 60Hz, resistive of inductive load.
-1
V
50
MHz
For capacitive load, derate current by 20%
lim CLASSIFICATIONROATFINhGFSE(2)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse VBoCltaXg5e1
MaximumRARNMKS Voltage
e Maximum DC Blocking Voltage
BCX53
12
13
VRRM BCX2501-10 30
VRMS
14
21
VDC BCX2503-10 30
14
15
16
40 BCX5051-16 60
28
35
42
40 BCX5053-16 60
18
10
115 120
80
100
150
200
56
70
105
140
80
100
150
200
r Maximum Average Forward Rectified Current
RANGE
63–250
P Peak Forward Surge Current 8.3 ms single half sine-wave
IO
63–160
IFSM
1.0
100–250
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
CJ
TJ
TSTG
-55 to +125
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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