BD744 查看數據表（PDF） - Inchange Semiconductor

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BD744

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD744

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -45V(Min)

·Collector Power Dissipation-

: PC= 90W@ IC= 25℃

·15A Continuous Collector Current

·Complement to Type BD743

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCBO

Collector-Base Voltage

-50

VCEO

Collector-Emitter Voltage

-45

VEBO

Emitter-Base Voltage

-5

IC

Collector Current-Continuous

-15

ICM

Collector Current-Peak

-20

IBB

Base Current-Continuous

-5

Collector Power Dissipation

PC

@ Ta=25℃

2

Collector Power Dissipation

@ TC=25℃

90

TJ

Junction Temperature

150

Tstg

Storage Temperature Range

-65~150

UNIT

V

V

V

A

A

A

W

℃

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

1.4 ℃/W

Thermal Resistance, Junction to Ambient 62.5 ℃/W

isc Website：www.iscsemi.cn

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