UTCBF422(Ver_A) 查看數據表（PDF） - Unisonic Technologies
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UTCBF422 Datasheet PDF : 3 Pages
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UTC BF422
NPN EPITAXIAL SILICON TRANSISTOR
.TYPICAL CHARACTERISTICS
Ic-VCE(LOW VOLTAGE REGION)
60 COMMON
50 EMITTER
1.6
1.2
Ta=25℃
0.8
40
0.6
0.4
30
0.3
0.2
20
0.15
10
0.1
IB=0.05mA
0
0
0
4
8 12 16 20 24 28
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE-Ic
500
300
COMMON EMITTER
VCE=10V
Ta=100℃
100
Ta=25℃
50
Ta=-25℃
30
10
0
0.3
2
1
0.5
0.3
0.1
0.05
0.03
0.01
-0.3
1
3
10
30
100
COLLECTOR CURRENT, Ic (mA)
VCE(sat)-Ic
COMMON EMITTER
Ta=25℃
Ta=100℃
Ta=25℃
Ta=-25℃
1
3
10
30
100
COLLECTOR CURRENT, Ic (mA)
Cob,Cre-VCB
10
IE=0
f=1MHz
8
Ta=25℃
6
4
Cob
2
Cre
0 0 40 80 120 160 200 240 280
COLLECTOR-BASE VOLTAGE, VCB(V)
500
300 COMMON
EMITTER
Ta=25℃
100
hFE-Ic
VCE=20V
50
30
10
5
10
0
0.3
1
3
10
30
100
COLLECTOR CURRENT, IC (mA)
2
1
0.5
0.3
0.1
0.05
0.03
VCE(sat)-Ic
COMMON EMITTER
Ta=25℃
Ic/IB=10
5
2
0.01
-0.3
1
3
10
30
100
COLLECTOR CURRENT, Ic (mA)
Ic-VBE
50
COMMON EMITTER
40 VCE=10V
-30
-20
-10
0
0
0.2 0.4
0.6
0.8 1.0 1.2
BQSE-EMITTER VOLTAGE, VBE (V)
fT-Ic
500
COMMON EMITTER
300 Ta=25℃
VCE=20V
100
50
30
VCE=10V
10
0.3
1
3
10
30
Collector Current, Ic (mA)
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-063,A
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