BLS3135-10 查看數據表（PDF） - NXP Semiconductors.

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BLS3135-10

Microwave power transistor

NXP Semiconductors. 

Philips Semiconductors

Microwave power transistor

Product specification

BLS3135-10

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VCBO

VCES

VEBO

ICM

Ptot

Tstg

Tj

Tsld

PARAMETER

collector-base voltage

collector-emitter voltage

emitter-base voltage

peak collector current

total power dissipation

storage temperature

operating junction temperature

soldering temperature

CONDITIONS

MIN.

open emitter

−

RBE = 0

−

open collector

−

tp ≤ 100 µs; δ ≤ 10%

−

tp = 100 µs; δ = 10%; Th = 25 °C

−

−65

−

up to 0.2 mm from ceramic cap; t ≤ 10 s −

MAX.

75

75

2

1.5

34

+200

200

235

UNIT

V

V

V

A

W

°C

°C

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Zth j-h

thermal impedance from junction to heatsink

tp = 100 µs; δ = 10%; note 1

tp = 200 µs; δ = 10%; note 1

tp = 300 µs; δ = 10%; note 1

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

VALUE

5.2

5.8

6.3

UNIT

K/W

K/W

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO

V(BR)CES

ICBO

ICES

IEBO

hFE

collector-base breakdown voltage

collector-emitter breakdown voltage

collector leakage current

collector leakage current

emitter leakage current

DC current gain

IC = 2.5 mA; open emitter

IC = 2.5 mA; VBE = 0

VCB = 40 V; IE = 0

VCE = 40 V; VBE = 0

VEB = 1.5 V; IC = 0

VCE = 5 V; IC = 0.25 A

MIN.

75

75

−

−

−

40

MAX.

−

−

0.3

0.5

0.1

−

UNIT

V

V

mA

mA

mA

APPLICATION INFORMATION

RF performance at Th = 25 °C in a common-base test circuit.

MODE OF OPERATION

f

(GHz)

VCE

(V)

Class-C; tp = 100 µs; δ = 10%

3.1 to 3.5

40

PL

Gp

ηC

(W)

(dB)

(%)

≥10

≥7.5

≥35

typ. 9

typ. 40

2000 Feb 01

3

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