BSM50GD120DN2E3226 查看數據表（PDF） - Siemens AG
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BSM50GD120DN2E3226 Datasheet PDF : 9 Pages
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BSM 50 GD120DN2E3226
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
90
A
17V
15V
IC
70
13V
11V
9V
60
7V
50
40
30
20
10
0
0
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
90
A
IC
70
60
50
40
30
20
10
0
0
2
4
6
8 10 V 14
VGE
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
90
A
17V
15V
IC
70
13V
11V
9V
60
7V
50
40
30
20
10
0
0
1
2
3
V
5
VCE
Semiconductor Group
5
Jan-10-1997
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