BUK101-50GS 查看數據表（PDF） - NXP Semiconductors.

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BUK101-50GS

PowerMOS transistor TOPFET

NXP Semiconductors. 

Philips Semiconductors

PowerMOS transistor

TOPFET

Product specification

BUK101-50GS

DESCRIPTION

Monolithic temperature and

overload protected power MOSFET

in a 3 pin plastic envelope, intended

as a general purpose switch for

automotive systems and other

applications.

APPLICATIONS

General controller for driving

lamps

motors

solenoids

heaters

FEATURES

Vertical power DMOS output

stage

Low on-state resistance

Overload protection against

over temperature

Overload protection against

short circuit load

Latched overload protection

reset by input

10 V input level

Low threshold voltage

also allows 5 V control

Control of power MOSFET

and supply of overload

protection circuits

derived from input

ESD protection on input pin

Overvoltage clamping for turn

off of inductive loads

QUICK REFERENCE DATA

SYMBOL PARAMETER

VDS

ID

PD

Tj

RDS(ON)

Continuous drain source voltage

Continuous drain current

Total power dissipation

Continuous junction temperature

Drain-source on-state resistance

VIS = 10 V

FUNCTIONAL BLOCK DIAGRAM

INPUT

O/V

CLAMP

RIG

LOGIC AND

PROTECTION

MAX.

50

29

75

150

50

UNIT

V

A

W

˚C

mΩ

DRAIN

POWER

MOSFET

SOURCE

PINNING - TO220AB

PIN

DESCRIPTION

1 input

2 drain

3 source

tab drain

Fig.1. Elements of the TOPFET.

PIN CONFIGURATION

SYMBOL

tab

D

TOPFET

I

P

1 23

S

January 1993

1

Rev 1.200

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