BUY69A 查看數據表（PDF） - Comset Semiconductors
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BUY69A Datasheet PDF : 3 Pages
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NPN BUY69A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
VCEO(SUS)
VCBO
Collector-Emitter Sustaining
Voltage (*)
Collector-Emitter
IEBO
Emitter Cutoff Current
ICES
Collector Cutoff Current
hFE
VCE(SAT)
VBE(SAT)
fT
Is/b
ton
DC Current Gain (*)
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation
Voltage (*)
Transition Frequency
Second Breakdown Collector
Current (**)
Turn-on time
ts
Storage time
tf
File time
tf
File time
IC=100 mA
400 -
IC=1 mA
IE =0
VCE=8 V
IC =0
VCE= VCES
VBE = 0
IC=2.5 A
VCE=10 V
IC=8 A
IB=2.5 A
IC=8 A
IB=2.5 A
IC=0.5 A
VCE=10 V
1000 -
-
-
-
-
15 -
-
-
-
-
- 10
VCE=25 V
4
-
IC=5 A , IB=1 A
VCC=250 V
- 0.2
IC=5 A , VCC=250 V
IB1 =1A , -IB2 =1 A
- 1.7
IC=5 A , VCC=-250 V
IB1 =1A , -IB2 =1 A
- 0.3
IC=8 A , VCC=-40 V
IB1 =2.5A , -IB2 =2.5 A
-
V
-
V
1 mA
1 mA
-
-
3.3
V
2.2
- MHz
-
A
-
-
µs
-
1
(*) Pulse Duration = 300 µs, Duty Cycle <= 1.5%
(**) Pulsed :1s, non repetitive pulse
COMSET SEMICONDUCTORS
2/2
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