C67078-S3134-A2 查看數據表（PDF） - Siemens AG

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C67078-S3134-A2

SIPMOS® Power Transistor

Siemens AG 

BUZ 305

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 800 V, VGS = 0 V, Tj = 25 °C

VDS = 800 V, VGS = 0 V, Tj = 125 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 10 V, ID = 5 A

Symbol

min.

V(BR)DSS

800

VGS(th)

2.1

IDSS

-

-

IGSS

-

RDS(on)

-

Values

Unit

typ.

max.

V

-

-

3

4

µA

0.1

1

10

100

nA

10

100

Ω

0.85

1

Semiconductor Group

2

01/97

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