DTA114EE 查看數據表（PDF） - TY Semiconductor

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DTA114EE

PNP Digital transistors (built in resistor)

TY Semiconductor 

Product specification

MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)

Symbol

Parameter

Limits(DTA114E□)

Unit

M

E

UA

CA

KA

SA

VCC

Supply Voltage

-50

V

VIN

Input Voltage

-40～+10

V

IO

Output Current

-50

mA

ICM

Peak Collector Current

-100

mA

PD

Power Dissipation

100

150

200

200

200

300

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Conditions

Min

Input voltage

VI(off)

VCC=-5V,IO=-100µA

-0.5

VI(on)

VO=-0.3V,IO=-10 mA

Output voltage

VO(on)

IO/II=-10mA/-0.5mA

Input current

II

VI=-5V

Output current

IO(off)

VCC=-50V,VI=0

DC current gain

GI

VO=-5V,IO=-5mA

30

Input resistance

R1

7

Resistance ratio

R2/R1

0.8

Transition frequency

fT

VO=-10V,IO=-5mA,f=100MHz

Typ

Max

Unit

V

-3

V

-0.3

V

-0.88

mA

-0.5

μA

10

13

1

1.2

250

kΩ

MHz

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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